International Journal of Scientific and Research Publications

IJSRP, Volume 4, Issue 8, August 2014 Edition [ISSN 2250-3153]


RF and Microwave Oscillator Design using p-HEMT Transistor
      Bhavana Benakaprasad, Salah Sharabi, and Dr. Khaled Elgaid
Abstract: This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are designed at 2.45 GHz frequency for which we find application in Bluetooth and Wi-Fi. In this paper, these designs are studied and tested, with their results analyzed below. Further, study proved that the Colpitts oscillator designed gave more output power and stability than the negative-resistance oscillators.

Reference this Research Paper (copy & paste below code):

Bhavana Benakaprasad, Salah Sharabi, and Dr. Khaled Elgaid (2018); RF and Microwave Oscillator Design using p-HEMT Transistor; Int J Sci Res Publ 4(8) (ISSN: 2250-3153). http://www.ijsrp.org/research-paper-0814.php?rp=P322996
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