Abstract: To improve conversion efficiency for crystalline silicon solar cells, impurity photovoltaic (IPV) effect has been proposed as an approach for application of new concept solar cell. In this paper, we have carried out a comparative study of IPV solar cells doped with thallium, indium and vanadium. The potential of the IPV solar cell is investigated with different doping materials. It is found that an increase of 2.72%, 2.95% and 3.81% for conversion efficiency can be obtained by indium, thallium and vanadium impurities respectively by the IPV effect. The influence of the light trapping on the IPV solar cell performance is discussed. It is found that cell efficiency can increase by about 2.88% due to the IPV effect. In addition, light trapping has very important impact on the IPV solar cell property. A good light trapping should be required to obtain better device performance for IPV solar cells.