International Journal of Scientific and Research Publications

IJSRP, Volume 3, Issue 6, June 2013 Edition [ISSN 2250-3153]


Application of Low Specific on Resistance and High Thermal Stability 6H –SIC DIMOSFET using with Uniform Distribution in the Drift Region
      Ranjana Prasad
Abstract: Silicon carbide(SiC) has lowest specific on resistance and high thermal stability as compared to silicon. This has made use of Silicon carbide in design of domestic electrical appliances to assist in energy saving. Silicon carbide power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system.

Reference this Research Paper (copy & paste below code):

Ranjana Prasad (2018); Application of Low Specific on Resistance and High Thermal Stability 6H –SIC DIMOSFET using with Uniform Distribution in the Drift Region; Int J Sci Res Publ 3(6) (ISSN: 2250-3153). http://www.ijsrp.org/research-paper-0613.php?rp=P181399
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