IJSRP, Volume 3, Issue 2, February 2013 Edition [ISSN 2250-3153]
D. S. Maske, M. Joshi, D. B. Gadkari
Vertical Directional Solidification (VDS) Technique was used for the bulk growths of InSb1-xBix semiconductor without seed for x = 0.04 and x = 0.06. The source materials were filled with argon in the quartz ampoules at the pressure 200 torr. The ampoules were synthesized for 48 hr at temperature 850 oC. Temperature gradient at the solid- liquid interface was of the order of 20 oC/cm. The ampoules were rotated at the speed of 12 rpm during the synthesis as well as the growth. The grown ingots were annealed at 250 oC for 48 hr. These two growths were carried out at the growth rate of 5mm/hr. In both the cases the composition of the source materials (Indium, antimony and Bismuth) in the grown crystals was estimated by EDAX analysis. An equal amount of InSbBi from each of the two ingots was filled in the new ampoule with argon pressure 200 torr and the growth was carried out at the growth rate of 3 mm/hr and rotation speed 12 rpm. The grown ingot was n-type semiconductor with mobility 1530 cm2/Vs and microhardness 200 Kg/mm2.