Abstract: Bulk crystals of dilute nitride of InSb (InSb:N) are grown using Vertical Directional Solidification (VDS) Technique. Substrates of thickness 500 μm were cut from the crystal and polished to mirror finish. These wafers were found n type in nature using Hall measurements. Boron (B) atoms were diffused in the substrate using ion implantation. Range of Boron atoms in the InSb:N substrate was estimated using SRIM software and SIMS was conducted after ion implantation to verify the Boron incorporation. I-V characteristics of the p-n junctions formed due to implantation of boron indicated diode formation with ideality factor 1.2.