International Journal of Scientific and Research Publications

IJSRP, Volume 5, Issue 1, January 2015 Edition [ISSN 2250-3153]


Study of p-n Junction Diodes Fabricated on Dilute Nitride of InSb
      Manisha Deshpande, Dilip Maske, Devarani Devi, Rashmi Choudhari, BrijMohan Arora, Dattatray Gadkari
Abstract: Bulk crystals of dilute nitride of InSb (InSb:N) are grown using Vertical Directional Solidification (VDS) Technique. Substrates of thickness 500 μm were cut from the crystal and polished to mirror finish. These wafers were found n type in nature using Hall measurements. Boron (B) atoms were diffused in the substrate using ion implantation. Range of Boron atoms in the InSb:N substrate was estimated using SRIM software and SIMS was conducted after ion implantation to verify the Boron incorporation. I-V characteristics of the p-n junctions formed due to implantation of boron indicated diode formation with ideality factor 1.2.

Reference this Research Paper (copy & paste below code):

Manisha Deshpande, Dilip Maske, Devarani Devi, Rashmi Choudhari, BrijMohan Arora, Dattatray Gadkari (2018); Study of p-n Junction Diodes Fabricated on Dilute Nitride of InSb; Int J Sci Res Publ 5(1) (ISSN: 2250-3153). http://www.ijsrp.org/research-paper-0115.php?rp=P444463
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