International Journal of Scientific and Research Publications

IJSRP, Volume 5, Issue 9, September 2015 Edition [ISSN 2250-3153]

Steady state and transient Brillouin gain in narrow band-gap magnetized semiconductors
      V. Pal Singh, M. Singh
Abstract: Using the hydrodynamic model of semiconductor plasmas, a detailed analytical investigation is made to study both the steady-state and the transient Brillouin gain in narrow band gap magnetized one-component centrosymmetric semiconductor viz. n-InSb under off-resonant laser irradiation. Using the fact that origin of stimulated Brillouin scattering (SBS) lies in the third-order (Brillouin) susceptibility ( ) of the medium, we obtained an expression of the threshold pump electric field ( ), the resultant gain coefficients (steady-state as well as transient ) and optimum pulse duration ( ) for the onset of SBS. The application of a strong magnetic field not only lowers but also enhances . The carrier heating by the intense pump modifies the electron collision frequency and hence the nonlinearity of the medium which in turn enhances significantly. The Brillouin gain is found to be maximizing when the generated acoustic wave suffers no dispersion in the medium. The enhanced can be greatly used in the compression of scattered pulses.

Reference this Research Paper (copy & paste below code):

V. Pal Singh, M. Singh (2018); Steady state and transient Brillouin gain in narrow band-gap magnetized semiconductors; Int J Sci Res Publ 5(9) (ISSN: 2250-3153).
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