International Journal of Scientific and Research Publications

IJSRP, Volume 4, Issue 4, April 2014 Edition [ISSN 2250-3153]


A Discussion about Defects Passivation and Etching Mechanisms in Polycrystalline Silicon Hydrogenated by MW-ECR Plasma
      D. Madi, B. Birouk
Abstract: In this work we have investigated the microwave plasma discharge assisted by electron cyclotron resonance for hydrogenation of thin film polycrystalline n+pp+ silicon solar cells in terms of defects passivation and surface etching. The polycrystalline silicon films were formed by high temperature chemical vapor deposition. Influence of various process parameters such as microwave plasma power (PMW), hydrogenation time (tH) and substrate temperature (TH) on the sheet resistance of the n+ emitter region and on the open-circuit voltage (Voc) of the n+pp+ structure were investigated. The n+ emitter region was obtained by phosphorus diffusion using a spin-on dopant P507 solution from filmtronics.

Reference this Research Paper (copy & paste below code):

D. Madi, B. Birouk (2018); A Discussion about Defects Passivation and Etching Mechanisms in Polycrystalline Silicon Hydrogenated by MW-ECR Plasma; Int J Sci Res Publ 4(4) (ISSN: 2250-3153). http://www.ijsrp.org/research-paper-0414.php?rp=P282579
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