Abstract: Since 1993, the vertical directional solidification (VDS) technique has been shown experimental evidences for the total detached growth for InSb/GaSb ingots grown- without seed, without wall contact, without coating and without external pressure. Detached growth and apparition of spontaneous gap performs a trick to the entire ingot by the self-detached growth and self-pressure difference. Among the ingots grown by VDS technique, 80% ingots slide out easily, 15% ingots were entrapped in the conical region of the ampoule, and 5% ingots were attached to the ampoule wall. Three types of detached growths have been investigated. Concepts of meniscus conversion from concave to convex and concave crystal-melt interface shape have been predicted from the strong evidence of experimental analysis. Experimental statistics for the detached growth and its mystery of the four decades is unfolded. The qualitative physical model has been proposed on the basis of experimental statistics as A new crystal growth process.