Abstract: The non-volatile semiconductor memory chips such as flash memory, EEPROM, FRAM etc must be used for data storage. When operating in space, memory microcircuits are exposed to radiation, which can lead to data corruption and functional failures. When compared to other non-volatile memories MRAM is been considered as the good one used for space application to withstand against radiation effect. Therefore Magneto-resistive Random-Access Memories (MRAMs) are preferred for space and radiation-hardened electronics applications. The reason MRAM is selected is based on solid- state form factor, non-volatility, radiation hardness, modularity, reliability, scalability, fault tolerance, support for mission assurance, small size, low mass, and low power consumption. MRAMs provide higher bit storage densities. Radiation hardened MRAM design is a crucial aspect of space and defence applications where memory devices must withstand harsh radiation environments. Rad-Hard MRAM is designed and analysed for various parameters which shows the tolerance level for radiation effects.