This thesis is mainly to study the oxygen sensing characteristics of gallium metal oxide film at high temperature, and to analyze the oxygen sensing at temperatures above 600°C. First, the gallium oxide thin film is grown on the silicon substrate by sputtering, and the film quality and the boundary particle size are determined by different sputtering conditions, and the film structure is analyzed by atomic force microscopy. Finally, using this intrinsic and variable resistance characteristic of a gallium oxide film under oxygen, a simple Wheatstone bridge circuit was designed to successfully complete an oxygen voltage sensing transducer.
K.F. Yarn (2019); High Sensitive O2 Transducer by Gallium Oxide Thin Film; International Journal of Scientific and Research Publications (IJSRP)
9(6) (ISSN: 2250-3153), DOI: http://dx.doi.org/10.29322/IJSRP.9.06.2019.p9083