Abstract: A high power laser propagating through ion implanted semiconductor plasma undergoes stimulated Brillouin scattering (SBS) arises due to nonlinear current density and acousto-optical strain of the medium in third-order optical polarization. We have considered that the negatively charged colloidal grains (CGs) are embedded in semiconductor plasma by means of ion implantation. By considering net negative charge of the CGs, we present an analytical study of the effects of CGs on threshold intensity, effective susceptibility and Brillouin gain characteristics. It is found that as the charge on the CGs builds up, the Brillouin gain and threshold are significantly modifies the characteristics for the onset of SBS processes.